Samsung's zHBM Concept Stacks Memory Directly on AI Accelerators

Samsung showed zHBM concept models at FMS 2026 in Santa Clara. The design vertically stacks HBM — high-bandwidth memory — directly on AI accelerators using next-generation wafer bonding. Samsung claims up to 8x performance, over 10x density versus HBM5, and 3x energy efficiency. These are concepts, not production-ready. Samsung also introduced V10 BV-NAND, stacking 400-plus layers for SSDs.