Samsung Shows zHBM Concept Stacking Memory Directly on AI Accelerators

Samsung unveiled concept models of zHBM at FMS 2026 in Santa Clara. The architecture vertically stacks HBM above AI accelerators using next-generation wafer bonding, claiming up to 8x performance, over 10x density versus HBM5, and 3x energy efficiency. Samsung presented these as concepts, not production-ready products. Samsung also introduced V10 BV-NAND, stacking 400-plus layers for SSDs.